| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668350 | Thin Solid Films | 2011 | 4 Pages |
Abstract
We have investigated photoluminescence and electrical properties of P−doped ZnTe layers grown by metalorganic vapor phase epitaxy as a function of VI/II ratio. Near band-edge emissions are strongly influenced by VI/II ratio. The low VI/II ratio corresponding to Zn-rich condition brings about heavy p-type doping with P as compared to Te-rich condition. The best VI/II ratio for obtaining high quality layer is one. A maximum carrier concentration of 5.4 × 1018 cm−3 is attained even for as-grown ZnTe layer. In this sample, the carrier concentration is almost independent of the measurement temperature, indicating conduction in an impurity band formed by shallow acceptor.
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Authors
M. Nishio, K. Kai, K. Saito, T. Tanaka, Q. Guo,