| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668471 | Thin Solid Films | 2011 | 4 Pages |
Abstract
We report on field-effect transistors using Mg0.1Zn0.9O thin film as channel layer. The effect of Mg is to increase the band gap and decrease the electron carrier concentration. The Mg0.1Zn0.9O film deposited by sol-gel method has a highly c-axis orientation and excellent optical properties. The devices display a channel mobility of 0.76 cm2 Vâ 1 sâ 1 and an on/off ratio of 400.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
F.J. Wang, Y.F. Huang, W. Li, M.S. Xue, J.F. Ou,