Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668532 | Thin Solid Films | 2010 | 4 Pages |
Abstract
ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800Â mTorr. XRD characterization showed that for a window of working pressures between 300 and 500Â mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400Â mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.
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Authors
M. Hezam, N. Tabet, A. Mekki,