Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668595 | Thin Solid Films | 2011 | 4 Pages |
Abstract
We prepared ZnO/n-Si heterojunctions by depositing ZnO films on n-Si substrates with different resistivities by radio-frequency magnetron sputtering. The microstructure of ZnO film was analyzed by X-ray diffraction and scanning electron microscopy. The current–voltage characteristics and ethanol gas sensing properties of the junctions were investigated at room temperature. It is found that optimization of n-Si substrate resistivity is critical to enhance the ethanol gas sensitivity of ZnO/n-Si heterojunction. The ZnO/n-Si heterojunction with n-Si substrate of 2–3 Ω cm exhibits the best ethanol gas sensing property. The junction shows the sensitivity of 29.41% to 0.24 g/L ethanol gas under + 0.52 V forward bias voltage.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Xiaoyan Zhou, Qingzhong Xue, Ming Ma, Jianpeng Li,