| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668597 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Half-metallic Heusler material Co2FeAl0.5Si0.5 (CFAS) nano-particles (NPs) embedded in metal-oxide-semiconductor (MOS) structures with thin HfO2 tunneling and MgO control oxides were investigated. The CFAS NPs were prepared by rapid thermal annealing. The formation of well-controlled CFAS NPs on thin HfO2 tunneling oxide was confirmed by atomic force microscopy (AFM). Memory characteristics of CFAS NPs in MOS devices exhibited a large memory window of 4.65Â V, as well as good retention and endurance times of 105Â cycles and 109Â s, respectively, demonstrating the potential of CFAS NPs as promising candidates for use in charge storage.
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Authors
JaBin Lee, KiWoong Kim, JunSeok Lee, GwangGuk An, JinPyo Hong,