Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668649 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Zinc cadmium oxide (ZnCdO) transparent thin film transistors (TFTs) have been fabricated with a back-gate structure using highly p-type Si (001) substrate. For the active channel, 30Â nm, 50Â nm, and 100Â nm thick ZnCdO thin films were grown by pulsed laser deposition. The ZnCdO thin films were wurtzite hexagonal structure with preferred growth along the (002) direction. All the samples were found to be highly transparent with an average transmission of about 80%~ in the visible range. We have investigated the change of the performance of ZnCdO TFTs as the thickness of the active layer is increased. The carrier concentration of ZnCdO thin films has been confirmed to be increased from 1016 to 1019Â cmâ3 as the film thickness increased from 30 to 100Â nm. Base on this result, the ZnCdO TFTs show a thickness-dependent performance which is ascribed to the carrier concentration in the active layer. The ZnCdO TFT with 30Â nm active layer showed good off-current characteristic of below ~Â 1011, threshold voltage of 4.69Â V, a subthreshold swing of 4.2Â V/decade, mobility of 0.17Â cm2/VÂ s, and on-to-off current ratios of 3.37Â ÃÂ 104.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Deuk-Hee Lee, Sangsig Kim, Sang Yeol Lee,