| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668663 | Thin Solid Films | 2011 | 7 Pages |
Abstract
We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P.A. Bennett, Zhian He, David J. Smith, F.M. Ross,