| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668670 | Thin Solid Films | 2011 | 4 Pages |
Abstract
We have fabricated a β-FeSi2 film by metalorganic chemical vapor deposition on a Si(001) substrate with β-FeSi2 seed crystals grown by molecular beam epitaxy, and investigated the crystallinity, surface morphology and temperature dependence of photoresponse properties of the β-FeSi2 film. The surface of the grown β-FeSi2 film was atomically flat, and step-and-terrace structure was clearly observed. Multi-domain structure of β-FeSi2 whose average size was approximately 200 nm however was revealed. The photoresponse was obtained in an infrared light region (~ 0.95 eV) at temperatures below 200 K. The external quantum efficiency reached a maximum, being as large as 25% at 100 K when a bias voltage was 2.0 V.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Mitsushi Suzuno, Keiichi Akutsu, Hideki Kawakami, Kensuke Akiyama, Takashi Suemasu,