Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668676 | Thin Solid Films | 2011 | 4 Pages |
Abstract
We have successfully grown 360-nm-thick undoped n-BaSi2 epitaxial layers on the n+-BaSi2/p+-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500Â nm under a reverse bias voltage of 4Â V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi2 epitaxial layers on a p-Si(111) substrate.
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Physical Sciences and Engineering
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Authors
Takashi Suemasu, Takanobu Saito, Katsuaki Toh, Atsushi Okada, Muhammad Ajmal Khan,