| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668681 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Ultrafast-deposition and a-Si precursor or cap layer are analyzed as possible approaches to the control upon interface intermixing and film growth process. A simple and effective design is delivered providing deposition rates up to 104 nm/s. XPS results evidence formation of Fe3Si in the layered structure Fe/a-Si/Si. Cross-section HRTEM data demonstrate enhanced intermixing at the a-Si/Fe film interface. Magnetic properties of the Fe–Si structures grown by the above methods are studied by in situ magneto-optic Kerr effect. Intermixing at the Fe/Si interface is the result of chemical reaction rather than diffusion.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.S. Gouralnik, N.G. Galkin, V.A. Ivanov, A.I. Cherednichenko, V.S. Plotnikov, E.V. Pustovalov,