Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668698 | Thin Solid Films | 2010 | 7 Pages |
Abstract
The effect of grazing incidence 4 keV Ar+ ion irradiation on the early stage of Ag thin film growth on amorphous Si was investigated. The double effect of axial and surface channeling resulted in grains oriented along the 〈110〉 axis in-plane, while the (111) out-of-plane texture was maintained. A slight average tilt of the (111) out-of-plane texture axis towards the ion beam direction is proposed to result from the difference between terrace and step edge sputtering yield. The observed tilt is consistent with a minimum erosion orientation of the surface profile.
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Authors
Daniel F. Förster, Sebastian Bleikamp, Thomas Michely,