Atomic layer deposition and characterization of zirconium oxide-erbium oxide nanolaminates

ZrO2 and Er2O3 thin films and nanolaminates were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium and ozone as precursors at 350 °C. Nanolaminates consisted of 3-8 nm thick ZrO2 and Er2O3 layers alternately deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The erbium content was 5-15 at.%. ZrO2-Er2O3 films crystallized already in as-deposited states. Upon annealing at 650 °C, the films were stabilized in the form of cubic or tetragonal ZrO2 polymorph and cubic Er2O3. Dielectric properties of the nanolaminates were comparable to those of the constituent oxides.