Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668712 | Thin Solid Films | 2010 | 4 Pages |
Abstract
The microstructures and electrical properties of 8.4% nitrogen-doped GeTe and GeBi(6 at.%)Te films thermally annealed in N2 atmosphere were investigated. With the addition of Bi to N-doped GeTe films, the initial crystallization temperature was reduced and crystallization speed slowed. The N-doped GeBiTe films showed a rapid increase in crystallite size compared to the N-doped GeTe films. The formation energy of the nucleus may be lower due to the Bi atoms and the growth speed may be slower.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ki-Hong Kim, Sang-Jun Choi, Ju-Cheol Park,