Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668879 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60–80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lin-Jer Chen, Jiunn-Der Liao, Yu-Ju Chuang,