Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668924 | Thin Solid Films | 2011 | 4 Pages |
Abstract
The formation of microcrystalline-Si thin film transistors (μC-Si TFTs) by using self-aligned nickel-silicided process has been studied. The μC-Si TFTs have been generally fabricated as the top-gate staggered-type structure due to the limitation of process temperature up to 200 °C for practical device applications on organic polymer substrates. However, at the processing temperature of 200 °C, this proposed self-aligned nickel-silicided scheme can cause better device characteristics of μC-Si TFTs than the general top-gate staggered structure, without extra photo masking step. As compared to the general top-gate staggered structure, the self-aligned nickel-silicided scheme can lead to larger bending of energy band near the source region, which facilitates causing more carrier tunneling from the source contact electrode. As a result, this proposed self-aligned nickel-silicided scheme can obviously cause a larger on-state current of μC-Si TFTs than the previous top-gate staggered structure.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.-H. Juang, Y.-S. Peng, B.-J. Liu,