| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668932 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Photoinduced changes in the optical properties of chalcogenide glass thin films have been studied extensively but usually only permanent changes were recorded through measurements before and after exposure to pump light. To understand the progression of such effects, in this paper we report in situ measurement of transient changes in the optical transmission of amorphous As2Se3, As5Se5 and As4Se3 thin films during their exposure to a He–Ne laser which has photon energy close to the bandgap of the studied compositions. Mathematical expressions are established, which describe accurately both the light intensity and time dependences of photodarkening. The structural origin of the observed changes is discussed briefly.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
H. Pribylova, K. Antoine, M. Vlcek, H. Jain,