Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668974 | Thin Solid Films | 2011 | 4 Pages |
Abstract
The general goal of this work is to study the structure and photoelectrical properties of the electrochemically deposited thin CdTe films. The conducted investigation has shown that (i) as-deposited films have the single-phase structure with a grain size of 1–10 μm and are of the n-type conductivity; (ii) photosensitivity abruptly decreases when the film thickness is over 10 μm; (iii) annealing at temperatures less than 500 °C improves the film quality with retention of the n-type conductivity; and (iv) photosensitivity of the films is not impaired under irradiation by 6 MeV electrons with a fluence of 5 × 1014 cm− 2.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.K. Fedotov, A.A. Ronassi, Vo Thi Tuiet Vi, A.V. Mazanik, O.V. Korolik, S.M. Rabchynski, G.A. Ragoisha, E.A. Streltsov,