Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668977 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Copper performs an important role in obtaining high-performance thin-film CdTe solar cell devices. Both initial performance and performance after stress depends strongly on the total copper content at the back-contact, the Cd to Te ratio on the backside, the etching process, and the way the copper is activated. With regard to getting high open circuit voltage a small amount of Cu seems sufficient upon the right anneal treatment. However, regarding open circuit voltage degradation for stressed devices there seems to be an optimum amount of Cu. Te-enrichment does not seem to have a big impact on device stability.
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Authors
B.A. Korevaar, R. Shuba, A. Yakimov, H. Cao, J.C. Rojo, T.R. Tolliver,