| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668981 | Thin Solid Films | 2011 | 4 Pages |
Abstract
The influence of oxygen and annealing in the presence of CdCl2 on the photoluminescence (PL) spectra of CdTe, component of SnO2/CdTe heterojunction (HJ), has been studied in a temperature range of 17-100Â K. The changes in the photoluminescence spectra were studied as a function of excitation intensity. Analysis of the PL spectra was carried out with considerations of spectra obtained from CdS/CdTe heterojunctions. CdTe side PL (SnO2/CdTe HJ) consisted of 1.450Â eV-DA defect band and 1.243Â eV band (17Â K). Annealing resulted in the disappearance of 1.243Â eV band in oxygen containing samples. Interface PL for the unannealed samples consisted of mainly the 1.264Â eV and a trace of the defect band. The CdCl2 treatment is responsible for an almost symmetrical 1.416Â eV band.
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Authors
Sergiu Vatavu, Hehong Zhao, Iuliana Caraman, Petru Gasin, Chris Ferekides,