| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668982 | Thin Solid Films | 2011 | 4 Pages |
Abstract
CuInS2 thin films were deposited by chemical spray of aqueous solutions containing CuCl2, InCl3 and thiourea at substrate temperature of 250 °C in air and subjected to annealing at 530 °C in H2S atmosphere. Structure and composition before and after annealing were studied by XRD, EDS, XPS and Raman spectroscopy. As-sprayed films were low-crystalline, showed uniform distribution of elements in film thickness and no oxygen content. For the CuInS2 films deposited from the solutions with [Cu2+] / [In3+] = 1.0 and 1.1, H2S treatment for 30 min increased the chalcopyrite content up to 73% and 51%, respectively. CuXS phase in sprayed CIS films promotes the crystallite growth but retards the formation of chalcopyrite phase during H2S treatment.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Kärber, A. Katerski, I. Oja Acik, V. Mikli, A. Mere, M. Krunks,