| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669023 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Current–voltage characteristics, spectral characteristics of short-circuit photocurrent and charge generation–recombination kinetics in InSe layer from the contact region of ZnO:Al/In2O3/InSe:Cd heterojunctions are investigated. The structures show photosensitivity in the photon energy range 0.96–3.30 eV. The photosensitivity in the low energy range is determined by absorption threshold of InSe:Cd, while in higher energy range, the optical transparency region of ZnO film prevails. For doping levels of 0.5–1.0 at.%, the ratio of the ambipolar diffusion coefficient and the recombination rate at the InSe surface is decreasing from 1.8 to 0.9 μm.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Elmira Cuculescu, Igor Evtodiev, Iuliana Caraman, Liviu Leontie, Vasile Nedeff, Dragoş-Ioan Rusu,