Phase composition of selenized Cu2ZnSnSe4 thin films determined by X-ray diffraction and Raman spectroscopy

Thin layers of Sn onto Cu–Zn alloy with different component ratios were processed at different temperatures. Scrupulous comparative analyses were performed by room temperature Raman spectroscopy and X-ray-diffractometry. An excess of tin on the surface results in isothermal selenization at 450 °C in the hexagonal residuals of unstable SnSe2 in the well-crystallized Stannite — Cu2ZnSnSe4. In similar selenization conditions, copper-rich layers as precursors result in the Stannite phase with micro-immersions of CuSe. Low-temperature photoluminescence spectra of selenized films indicated to two Gaussian shaped bands at 0.81 and 1.16 eV.