Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669104 | Thin Solid Films | 2010 | 6 Pages |
Abstract
Sn doped ZnO films were obtained by cathodic electrodeposition on Zn foil. The X-ray diffraction analysis revealed formation of the wurtzite phase of ZnO only. The scanning electron microscopic images showed formation of randomly oriented ZnO nanowires having diameter less than 150 nm and lengths of several micrometers. The relative atomic percentage of Sn, estimated from the energy-dispersive spectra, was found to be 0.5 and 2.0 in the post-annealed ZnO films deposited for 10 and 40 min durations, respectively. The field emission characteristics of the Sn doped ZnO nanowires are found to be appreciable in terms of the threshold field and emission current stability.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Farid Jamali Sheini, Dilip S. Joag, Mahendra A. More,