The influence of base doping density on the performance of evaporated poly-Si thin-film solar cells by solid-phase epitaxy

The phosphorous base doping dependence of evaporated poly-Si thin-film solar cell by aluminium-induced crystallization solid-phase epitaxy (ALICE) has been investigated. It is found that the open-circuit voltage (Voc) of the the poly-Si thin-film solar cell increases with the decrease of base doping density due to the defect-rich nature of poly-Si thin-film material and effectiveness of the back surface field. Meanwhile, the short-circuit current (Jsc) also increases with the decrease of the base doping density as a result of the reduced doping-induced defects. Therefore, the maximum Voc and Jsc are simultaneously achieved when the lowest phosphorous base doping density (~ 5.5 × 1015 cm− 3) is applied.