Effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films

The effects of air annealing on the optical, electrical, and structural properties of indium-tin oxide thin films were investigated using spectroscopic ellipsometry in the UV–visible range, reflectance–transmittance spectra at normal incidence in the infrared range, electrical resistivity measurements, and X-ray diffraction. It was found that annealing at 300 °C produces an overall shift to lower photon energies of the optical constant spectra, which is related to the increase in electrical resistivity. The electrical measurements performed in the 25–300 K range show a metallic behavior with large residual resistivity, quantity that increases with annealing temperature and is closely related with the change in the relative intensity of the main diffraction peaks. Also it is shown that under certain conditions of film deposition onto indium-tin oxide, some of its properties can change in a similar way as in air-annealing processing.