| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669209 | Thin Solid Films | 2009 | 5 Pages |
Abstract
Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp)2 and NH3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 µΩ cm and a low root-mean-square roughness at a growth temperature of 270 °C. The thickness of the underlying TaN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Qi Xie, Yu-Long Jiang, Jan Musschoot, Davy Deduytsche, Christophe Detavernier, Roland L. Van Meirhaeghe, Sven Van den Berghe, Guo-Ping Ru, Bing-Zong Li, Xin-Ping Qu,