Article ID Journal Published Year Pages File Type
1669210 Thin Solid Films 2009 4 Pages PDF
Abstract
The stability of flash-evaporated amorphous Ge2Sb2Te5 thin films has been studied under medium-term temperature treatment (30 - 80 °C, with a step of 10 °C) in ten subsequent heating and cooling cycles. The significant changes in structure and optical properties are reported. The temperature cycling of the films resulted in formation of an isolated 5 - 7 nm nano-crystalline phase in the amorphous phase. The corresponding increase in refractive index and change in optical bandgap energy and sheet resistance are also presented. The formation of Ge2Sb2Te5 nano-crystals (~ 5 - 7 nm) even under temperature below 80 °C could contribute to the explanation of mechanism of resistivity fluctuation (drift) of the “amorphous phase” films. We also show that the optical and electrical properties of flash evaporated Ge2Sb2Te5 thin films are very similar to those reported for sputtered films.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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