Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669249 | Thin Solid Films | 2011 | 6 Pages |
Abstract
A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kyeong-Jae Byeon, Eun-Ju Hong, Hyoungwon Park, Joong-Yeon Cho, Seong-Hwan Lee, Junggeun Jhin, Jong Hyeob Baek, Heon Lee,