Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669273 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Ferroelectric Bi3.25La0.75Ti3O12 thin films annealed at different temperatures were prepared on Pt/Ti/SiO2/Si substrates by metalorganic decomposition method. The leakage current behavior and the current conduction mechanism were investigated. For all films, the leakage current density − electric field (J−E) characteristic is confined within a “triangle” in the log (J)− log (E) plane bounded by three limiting curves: Ohm's law (J ∝ E), trap-filled-limit (J ∝ Ea, a > 1), and Child's law (J ∝ E2). At high field region, Bi3.25La0.75Ti3O12 thin films with grains of rod-like show higher leakage current, while films with grains of spherical- or planar-like exhibit lower leakage current.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Xiumei Wu, Shuai Dong, Ya Zhai, Mingxiang Xu, Yi Kan,