Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669303 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Enhanced growth of low-resistivity self-aligned titanium silicides on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si (a-Si) interlayer has been achieved. The a-Si layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity C54-TiSi2 on Si0.7Ge0.3 grown by molecular beam epitaxy. The process promises to be applicable to the fabrication of high-speed Si–Ge devices.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
W.W. Wu, C.W. Wang, K.N. Chen, S.L. Cheng, S.W. Lee,