Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669319 | Thin Solid Films | 2010 | 4 Pages |
Abstract
For improving compatibility with IC processes, this work presents a low temperature process (< 400 °C) to fabricate a small-sized-carbon nanotube (CNT) (< 6 graphene layers) pattern by buffer layer (AlN) and CoCrPtOx catalyst precursor-assisted microwave plasma chemical vapor deposition (MPCVD). Without high temperature heating on the whole specimen, the low temperature process mainly results from selective local activation laser heating (≧ 600 °C) to form the catalyst nanostructures, which are beneficial to low temperature H-plasma treatment to form catalyst nanoparticles for CNT growth. The functions of the buffer layer and the catalyst precursor are to help the heat dissipation and the small-sized CNT formation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
I-Ju Teng, Tsai-Hau Hong, Hui-Lin Hsu, Sheng-Rui Jian, Wei-Hsiang Wang, Cheng-Tzu Kuo,