| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669339 | Thin Solid Films | 2010 | 4 Pages |
Abstract
We introduce the InGaN/GaN multi-quantum barriers (MQBs) into InGaN/GaN multi-quantum well (MQW) heterostructures to improve the performance of light-emitting diodes. The temperature and injection current dependent electroluminescence were carried out to study the thermal effect of InGaN/GaN MQWs. We observe the enhancement of carrier confinement in the active layer and the inhibited carrier leakage over the barrier for the sample with MQBs. In addition, the external quantum efficiency of the samples is obtained. It is found that the radiative efficiency of the sample possessing MQBs exhibits less sensitive temperature dependence and leads to an improved efficiency in the high temperature and high injection current range.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jiunn-Chyi Lee, Ya-Fen Wu,