Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669391 | Thin Solid Films | 2010 | 4 Pages |
Abstract
The etching characteristics of ITO in a BCl3/Ar plasma, including the etch rate and selectivity of ITO, were investigated. The maximum etch rate of 62.8 nm/min for the ITO thin films was obtained at a BCl3/Ar gas mixing ratio of 25%/75%. Ion bombardment by physical sputtering was required to obtain such high etch rates, due to the relatively low volatility of the by-products formed during the etching. The chemical reactions on the etched surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and the preferential losses on the etched surfaces were investigated using Atomic Force Microscopy (AFM).
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jae-Hyung Wi, Jong-Chang Woo, Doo-Seung Um, JunSeong Kim, Chang-Il Kim,