Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669405 | Thin Solid Films | 2010 | 4 Pages |
Abstract
We analyzed the effective channel length variation of hydrogenated amorphous silicon thin-film transistors (TFTs) that have wavy edge source/drain (S/D) electrodes. Edge waviness is frequently observed when narrow electrodes are fabricated by using printing methods. We used hydrogenated amorphous silicon (a-Si:H) TFTs and photolithographically patterned wavy edge S/D electrodes for accurate analysis. From a transmission line method (TLM), we successfully related the channel current variation to the variation of current transfer length (LT_wavy) of the wavy edge S/D electrodes originated from current spreading and geometrical edge waviness effects which can be separately extracted.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jaewook Jeong, Yongtaek Hong,