Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669409 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Thin film transistors having nanocrystalline silicon as an active layer were fabricated by catalytic-CVD at a low process temperature (â¤Â 200 °C). The tri-layer of the bottom-gate TFT was deposited continuously inside the Cat-CVD reactor. In order to improve the quality of the gate dielectric layer an in-situ hydrogen annealing step was introduced in between the silicon nitride and the nanocrystalline silicon deposition steps. The in-situ hydrogen annealing was effective in reducing the hysteresis in the C-V characteristics and in enhancing the breakdown voltage by decreasing the defects inside the SiNx film.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Youn-Jin Lee, Kyoung-Min Lee, Wan-Shick Hong,