Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669419 | Thin Solid Films | 2010 | 4 Pages |
Abstract
This paper reports our investigation of different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on an indium–gallium–zinc oxide (IGZO) semiconductor. Transfer length, contact resistance, channel conductance, and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with intrinsic field-effect mobility (μFE-i) of 10.0 cm2/Vs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Woong-Sun Kim, Yeon-Keon Moon, Kyung-Taek Kim, Je-Hun Lee, Byung-du Ahn, Jong-Wan Park,