Article ID Journal Published Year Pages File Type
1669512 Thin Solid Films 2011 4 Pages PDF
Abstract

H2 additional effect for crystallization of SnO2 films prepared by the hot-wire CVD method was investigated. The crystallization of SnO2 films starts at 170 °C. The selectivity enhancement of the solar cell substrate will contribute to reduce the cost of silicon thin film solar cells. The atomic hydrogen assisted nano-crystallization exists for the depositions of SnO2 films by the hot-wire CVD method. Furthermore, the addition of H2 gas improved the electrical conductivity up to 5.3 × 100 S/cm. However, these effects are limited in the deposition condition of a small amount of hydrogen. Addition of much higher hydrogen concentration starts an etching effect of oxygen atoms.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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