Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669512 | Thin Solid Films | 2011 | 4 Pages |
Abstract
H2 additional effect for crystallization of SnO2 films prepared by the hot-wire CVD method was investigated. The crystallization of SnO2 films starts at 170 °C. The selectivity enhancement of the solar cell substrate will contribute to reduce the cost of silicon thin film solar cells. The atomic hydrogen assisted nano-crystallization exists for the depositions of SnO2 films by the hot-wire CVD method. Furthermore, the addition of H2 gas improved the electrical conductivity up to 5.3 × 100 S/cm. However, these effects are limited in the deposition condition of a small amount of hydrogen. Addition of much higher hydrogen concentration starts an etching effect of oxygen atoms.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
H. Natsuhara, T. Tatsuyama, M. Ushiro, M. Furuhashi, T. Fujii, F. Ohashi, N. Yoshida, S. Nonomura,