Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669569 | Thin Solid Films | 2009 | 4 Pages |
Abstract
High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm2°V− 1s− 1 and about 3 × 1018°cm− 3 at 600 °C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jong Hyun Lee, Jun Seok Lee, Seung Nam Cha, Jong Min Kim, Do Seok Seo, Won Bin Im, Jin Pyo Hong,