Characterization of low mole fraction In-doped-ZnO/Si (111) heterostructure grown by pulsed laser deposition

In-doped ZnO films with low mole fraction (0.1, 0.3, 0.6 at.%) were prepared on p-Si (111) at 600 °C by the pulsed laser deposition (PLD). The effect of composition on structures, optical and electrical properties was studied by X-ray diffraction, atomic force microscopy, photoluminescence, and the Hall Effect measurement system. In-doped ZnO film has (101) preferred orientation and UV emissions of ZnO:In films were red shift with increasing In contents and there are no deep-level emissions. The lowest resistivity of 5.6 × 10− 2 Ωcm and highest mobility of 33.1 cm2/Vs was observed at the In content of 0.3 at.%.