Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669672 | Thin Solid Films | 2010 | 4 Pages |
Abstract
Ge0.7Mn0.3 thin films were fabricated on Al2O3 (0001) and glass substrates at growth temperatures ranging from room temperature to 500 °C by a radio frequency magnetron sputtering. We found that the Ge0.7Mn0.3 thin films showed a polycrystalline-to-amorphous transition at about 360 °C, and the ferromagnetic transition temperature of each thin film depends on its structure — crystalline or amorphous states. Particularly, the Ge0.7Mn0.3 thin films showed room temperature ferromagnetism when they were fabricated at temperatures above the crystallization temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sung-Kyu Kim, Jong Yeog Son, Young-Han Shin, Moon-Ho Jo, S. Park, Tae Eun Hong, K.J. Yee,