Stability and phase transition studies of Ga–pWSe2 Schottky diode by current–voltage–temperature method

Ga–pWSe2 Schottky diodes have been fabricated by making contact of liquid gallium on pWSe2 surfaces. The stability and phase transition of the diodes were investigated in terms of barrier height, ideality factor and series resistance using thermionic emission model by current–voltage method. The anomalous behaviour of these parameters during the initial hours of fabrication is interpreted in terms of the phase related transition of gallium from liquid to solid. Beyond this time period, diodes show stable nature in its parameters.