| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669683 | Thin Solid Films | 2010 | 6 Pages |
Abstract
(AlCrTaTiZr)Ox films were deposited at 350 °C by DC magnetron sputtering from high-entropy alloy target. Oxygen concentration increases with oxygen flow ratio, and saturates near 67 at.%. As-deposited films have an amorphous structure. Their hardness fall in the range of 8–13 GPa. All amorphous oxide films maintain their amorphous structure up to 800 °C for at least 1 h. After 900 °C 5 h annealing, crystalline phases with the structures of ZrO2, TiO2, or Ti2ZrO6 form. Annealing enhances mechanical properties of the films. Their hardness and modulus attain to the values about 20 and 260 GPa, respectively. The resistivity of the metallic films is around 102 μΩ cm but drastically rises to 1012 μΩ cm when oxygen concentration increases.
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Authors
Miao-I. Lin, Ming-Hung Tsai, Wan-Jui Shen, Jien-Wei Yeh,