Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669694 | Thin Solid Films | 2010 | 5 Pages |
Abstract
Heusler-type Fe2VAl thin-films were prepared on zirconia substrate by radio-frequency magnetron sputtering. The effect of deposition temperature on crystal structure and electrical properties was investigated. The degree of Heusler-type ordering in crystal structure was enhanced by the increase in deposition temperature. The enhanced Heusler-type ordering contributed to the formation of a steep density of state derived from pseudogap opening near Fermi level, resulting in large Seebeck coefficient. Since the film consisted of submicrometer-size grains, the electrical conductivity and the thermal conductivity of the film were both reduced by the grain boundary effect. The estimated thermoelectric power factor was 1.0 mW/mK2 at 350 K.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Masashi Mikami, Toshihiro Kamiya, Keizo Kobayashi,