Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669702 | Thin Solid Films | 2010 | 5 Pages |
Abstract
In this work, a possible way to enhance the epitaxial growth of metastable, tensile strained SixC1 − x layers by the addition of germanium is demonstrated. During ultra-high vacuum chemical vapor deposition growth, the co-mixing of germane to the SixC1 − x precursors was found to enhance the growth rate by a factor of ~ 3 compared to the growth of pure SixC1 − x. Furthermore, an increase of the amount of substitutional incorporated carbon has been observed. Selective SixGeyC1 − x − y deposition processes utilizing a cyclic deposition were developed to integrate epitaxial tensile strained layers into source and drain areas of n-channel transistors.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
I. Ostermay, T. Kammler, J.W. Bartha, P. Kücher,