Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669745 | Thin Solid Films | 2011 | 4 Pages |
Abstract
A proof-of-concept of applying laser micro-machining to fabricate high performance GaN light-emitting diode (LED) was presented in this study. Laser micro-machining was applied to fabricate GaN LED chip with angled sidewalls (ALED). The inclined sapphire sidewalls were coated with highly reflective silver film which functions as an efficient light out-coupling medium for photons within the LED structure. Thus, more laterally-propagating photons can be redirected to the upward direction of the ALED with silver coating (Ag-ALED). Performances of the Ag-ALED, ALED and conventional planar GaN LED were evaluated. At an injection current of 30Â mA, the light output intensity of Ag-ALED was significantly improved by 97% and 195% as compared to ALED and conventional planar LED, respectively. The corresponding wall-plug efficiency of Ag-ALED was remarkably increased by 95% and 193% as compared to ALED and conventional planar LED, respectively. The results of this study demonstrated that the Ag-ALED showed a pronounced increase in light output intensity compared to conventional planar LED, which may have many potential applications in the field of display engineering.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K.N. Hui, K.S. Hui, Heesoo Lee, Dong-Hyun Hwang, Young-Guk Son,