Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669838 | Thin Solid Films | 2009 | 4 Pages |
Abstract
Ga-doped ZnO (GZO) films with a thickness of 100 nm were prepared on cyclo-olefin polymer (COP) and glass substrates at various temperatures below 100 °C by ion plating with direct-current arc discharge. The dependences of the characteristics of GZO films on the substrate temperature Ts were investigated. All the polycrystalline GZO films, which exhibited a high average visible transmittance of greater than 86%, were crystallized with a wurtzite structure oriented along the c-axis. The lowest resistivities of the GZO films were 5.3 Ã 10â 4 Ωcm on the glass substrate and 5.9 Ã 10â 4 Ωcm on the COP substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Miyake, T. Yamada, H. Makino, N. Yamamoto, T. Yamamoto,