| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669840 | Thin Solid Films | 2009 | 5 Pages |
Abstract
Influence of substrate temperature and Zn-precursors on growth rate, crystal structure, and electrical property of undoped ZnO thin films grown by atomic layer deposition (ALD) have been studied. Differences between dimethylzinc (DMeZn) and diethylzinc (DEtZn) used as Zn-precursors were examined. The ZnO films grown using DMeZn showed higher electrical resistivity compared to that grown using DEtZn. However, the higher resistivity in the case of DMeZn was owing to much amount of residual impurities incorporated during the ALD growth.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hisao Makino, Aki Miyake, Takahiro Yamada, Naoki Yamamoto, Tetsuya Yamamoto,