| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1669860 | Thin Solid Films | 2010 | 4 Pages |
Abstract
In this work, the advances in the resistance switching characteristics of stoichiometric ZrO2 thin films were studied. The Al/ZrO2/Al structure exhibits reliable and reproducible switching behaviours. The thickness dependence and electrode size effect was demonstrated and understood in terms of a combined model of conductive filament/carriers trapping. Analyses of current–voltage characteristics were performed and it is suggested that the resistive switching characteristics of the ZrO2 film are governed by both the electrode/interface effect and the formation of conductive multi-filaments.
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Physical Sciences and Engineering
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Authors
P. Zhou, H. Shen, J. Li, L.Y. Chen, C. Gao, Y. Lin, T.A. Tang,