Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669873 | Thin Solid Films | 2010 | 4 Pages |
Abstract
A modified four-step method was applied to grow a 3C-SiC thin film of high quality on the off-axis 1.5° Si(111) substrate in a mixed gas of C3H8, SiH4 and H2 using low pressure chemical vapor deposition. The modified four-step method adds a diffusion step after the carburization step and removes the cooling from the traditional three-step method (clean, carburization, and growth). The X-ray intensity of the 3C-SiC(111) peak is enhanced from 5 Ã 104 counts/s (the modified three steps) to 1.1 Ã 105 counts/s (the modified four steps). The better crystal quality of 3C-SiC is confirmed by the X-ray rocking curves of 3C-SiC(111). 3C-SiC is epitaxially grown on Si(111) supported by the selected area electron diffraction patterns taken at the 3C-SiC/Si(111) interface. Some {111} stacking faults and twins appear inside the 3C-SiC, which may result from the stress induced in the 3C-SiC thin film due to lattice mismatch. The diffusion step plays roles in enhancing the formation of Si-C bonds and in reducing the void density at the 3C-SiC/Si(111) interface.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jui-Min Liu, Wei-Yu Chen, J. Hwang, C.-F. Huang, Wei-Lin Wang, Li Chang,