Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1669889 | Thin Solid Films | 2010 | 4 Pages |
Abstract
CuIn(Sex, S1 − x)2 films were prepared by means of non-vacuum, instantaneous, direct synthesis from elemental In, Cu, Se and S particle precursor films by passing an electrical current with precise control through the metal substrate. For a constant reaction period of 1 s, unreacted elemental particles remained in the films for powers below 1 kV A, whereas the reaction to CuIn(Sex, S1 − x)2 (x = 1) appeared to be complete at higher power. Chalcopyrite structure was observed in the range from 1.08 kV A to 1.24 kV A, the sphalerite structure appeared over 1.35 kV A. X-ray diffraction shows single (112) peaks of CuIn(Sex, S1 − x)2 and the peak position agreed with the nominal composition of the precursors.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
R. Kaigawa, T. Yoshida, T. Kitagawa, R. Klenk,